solid state devices, inc. 14701 firestone blvd * la mirada, ca 90638 phone: (562) 404 - 4474 * fax: (562) 404 - 1773 ssdi@ssdi - power.com * www.ssdi - power.com designer?s data sheet features: piv: 100 volts low reverse leakage current low forward vol tage drop guard ring for overvoltage protection isolated hermetically sealed package available in glass or ceramic seal packages custom lead forming available eutectic die attach 175 c operating junction temperature tx, txv, and space level screening avail able SSR2008M, ssr2008z ssr2009m, ssr2009z ssr2010m, ssr2010z 20 amps 100 volts schottky rectifer to - 254 to - 254z available in the following configurations: to - 254: SSR2008M, ss r2008mub, SSR2008Mdb, ssr2009m, ssr2009mub, ssr2009mdb, ssr2010m, ssr2010mub, ssr2010mdb. to - 254z: ssr2008z, ssr2008zub, ssr2008zdb, ssr2009z, ssr2009zub, ssr2009zdb, ssr2010z, ssr2010zub, ssr2010zdb maximum ratings 2 / symbol value unit peak r epetitive reverse voltage and dc blocking voltage SSR2008M & z ssr2009m & z ssr2010m & z v rrm v rwm v r 80 90 100 volts average rectified forward current 1 / 3 / (resistive load, 60 hz, sine wave, t c = 25 c) i o 20 amps peak surge current 3 / (8.3 ms pulse , half sine wave, t a = 25 c) i fsm 300 amps operating and storage temperature t op & t stg - 65 to +175 c maximum thermal resistance 3 / (junction to case) r q jc 1.0 c/w note: 1 / derate linearly at 1a/ c for t c > 155 c. 2 / all electrical characteristics @25 c, unless otherwise specified. 3 / pins 2 and 3 externally connected togethe r note: all specifications are subject to change without notification. scd's for these devices should be reviewed by ssdi prior to release. data sheet #: rs0091h doc
electrical characteri stics 2 / (per leg) symbol max unit instantaneous forward voltage drop (300 - 500 m s pulse) i f = 10 a i f = 15 a i f = 20 a v f1 v f2 v f3 0.75 0.82 0.85 volts instantaneous forward voltage drop (t a = - 55 c, 300 - 500 m s pulse) i f = 10 a v f4 0.85 volts reve rse leakage current (rated v r , 300 m s pulse minimum) t a = 25 c t c = 100 c i r1 i r2 200 10 m a ma junction capacitance (v r = 10 v, f = 1mhz, t a = 25 c) c j 800 pf case outline: to - 254 (suffix m) pin 1 pin 3 pin 2 case outline: to - 254z (suffix z) pin 1 pin 2 pin 3 optional lead bend c onfiguration suffix md & zd suffux mu & zu pin assignment function pin 1 pin 2 pin 3 rectifier 4 / cathode anode anode note: 4 / pins 2 and 3 externally connected for best performance. solid state devices, inc. 14701 firestone blvd * la mirada, ca 90638 phone: (562) 404 - 4474 * fax: (562) 404 - 1773 ssdi@ssdi - power.com * www.ssdi - power.com SSR2008M, ssr2008z ssr2009m, ssr2009z ssr2010m, ssr2010z note: all specifications are subje ct to change without notification. scd's for these devices should be reviewed by ssdi prior to release. data sheet #: rs0091h doc
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